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Silicon Carbide Monocrystalline Growth Furnace Resistance Method 6 8 12inch SiC Ingot Growth Furnace
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | SiC ingot growth furnace |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Delivery Time: | 5-10months |
| Payment Terms: | T/T |
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Detail Information |
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| Purpose: | For 6 8 12inch SiC Single Crystal Growth Furnace | Dimensions (L × W × H): | Dimensions (L × W × H) |
|---|---|---|---|
| Pressure Range: | 1–700 Mbar | Temperature Range: | 900–3000°C |
| Maximum Furnace Temperature: | 2500°C | Rotation Shaft Diameter: | 50 Mm |
| Highlight: | 12 inch SiC ingot growth furnace,SiC ingot growth furnace |
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Product Description
Silicon carbide monocrystalline growth furnace resistance method 6 8 12inch SiC ingot growth furnace
ZMSH SiC Single Crystal Growth Furnace: Precision Engineered for High-Quality SiC Wafers
ZMSH proudly introduces its SiC single crystal growth furnace, an advanced solution engineered for high-performance SiC wafer manufacturing. Our furnace efficiently produces SiC single crystals in 6-inch, 8-inch, and 12-inch sizes, meeting the growing needs of industries such as electric vehicles (EVs), renewable energy, and high-power electronics.
Properties of SiC Single Crystal Growth Furnace
- Advanced Resistance Heating Technology: The furnace uses state-of-the-art resistance heating technology to ensure uniform temperature distribution and optimal crystal growth.
- Temperature Control Precision: Achieves temperature regulation with a tolerance of ±1°C throughout the entire crystal growth process.
- Versatile Applications: Capable of growing SiC crystals for wafers up to 12 inches, enabling the production of larger wafers for next-generation power devices.
- Vacuum & Pressure Management: Equipped with an advanced vacuum and pressure system to maintain ideal growth conditions, reducing defect rates and improving yields.
Technical Specifications
| Specification | Details |
|---|---|
| Dimensions (L × W × H) | 2500 × 2400 × 3456 mm or customize |
| Crucible Diameter | 900 mm |
| Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| Leakage Rate | ≤5 Pa/12h (bake-out) |
| Rotation Shaft Diameter | 50 mm |
| Rotation Speed | 0.5–5 rpm |
| Heating Method | Electric resistance heating |
| Maximum Furnace Temperature | 2500°C |
| Heating Power | 40 kW × 2 × 20 kW |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S; 10–100 mbar: ±0.5% F.S; 100–700 mbar: ±0.5% F.S |
| Operation Type | Bottom loading, manual/automatic safety options |
| Optional Features | Dual temperature measurement, multiple heating zones |
Result: Perfect Crystal Growth
The core strength of our SiC single crystal growth furnace lies in its ability to consistently produce high-quality, defect-free SiC crystals. With precision temperature control, advanced vacuum management, and cutting-edge resistance heating technology, we ensure flawless crystal growth with minimal defects. This perfection is crucial for semiconductor applications, where even slight imperfections can significantly impact the performance of the final device.
Meeting Semiconductor Standards
The SiC wafers grown in our furnace exceed industry standards for both performance and reliability. The crystal structures exhibit exceptional uniformity, low dislocation densities, and high electrical conductivity, making them ideal for high-power, high-frequency semiconductor devices. These qualities are essential for next-generation power devices, including those used in electric vehicles (EVs), renewable energy systems, and telecommunication equipment.
| Inspection Category | Quality Parameters | Acceptance Criteria | Inspection Method |
|---|---|---|---|
| 1. Crystal Structure | Dislocation Density | ≤ 1 cm⁻² | Optical Microscopy / X-ray Diffraction |
| Crystalline Perfection | No visible defects or cracks | Visual Inspection / AFM (Atomic Force Microscopy) | |
| 2. Dimensions | Ingot Diameter | 6-inch, 8-inch, or 12-inch ±0.5mm | Caliper Measurement |
| Ingot Length | ±1mm | Ruler / Laser Measurement | |
| 3. Surface Quality | Surface Roughness | Ra ≤ 0.5 μm | Surface Profilometer |
| Surface Defects | No microcracks, pits, or scratches | Visual Inspection / Microscopic Examination | |
| 4. Electrical Properties | Resistivity | ≥ 10³ Ω·cm (typical for high-quality SiC) | Hall Effect Measurement |
| Carrier Mobility | > 100 cm²/V·s (for high-performance SiC) | Time-of-Flight (TOF) Measurement | |
| 5. Thermal Properties | Thermal Conductivity | ≥ 4.9 W/cm·K | Laser Flash Analysis |
| 6. Chemical Composition | Carbon Content | ≤ 1% (for optimal performance) | ICP-OES (Inductively Coupled Plasma Optical Emission Spectroscopy) |
| Oxygen Impurities | ≤ 0.5% | Secondary Ion Mass Spectrometry (SIMS) | |
| 7. Pressure Resistance | Mechanical Strength | Must withstand stress tests without fracture | Compression Test / Bending Test |
| 8. Uniformity | Crystallization Uniformity | ≤ 5% variation across ingot | X-ray Mapping / SEM (Scanning Electron Microscopy) |
| 9. Ingot Homogeneity | Micropore Density | ≤ 1% per unit volume | Microscopy / Optical Scanning |
ZMSH Support Services
- Customizable Solutions: Our SiC single crystal growth furnace can be customized to meet your specific production requirements, ensuring high-quality SiC crystals.
- On-Site Installation: Our team manages the on-site installation and ensures smooth integration with your existing systems for optimal performance.
- Comprehensive Training: We provide thorough customer training covering furnace operation, maintenance, and troubleshooting to ensure your team is equipped for effective crystal growth.
- After-Sales Maintenance: ZMSH offers reliable after-sales support, including maintenance and repair services, to ensure your furnace operates at peak performance.
Q&A
Q: What is the crystal growth of silicon carbide?
A: Silicon carbide (SiC) crystal growth involves creating high-quality SiC crystals through processes like Czochralski or Physical Vapor Transport (PVT), essential for power semiconductor devices.
Key Words:
SiC Single Crystal Growth Furnace SiC Crystals Semiconductor Devices Crystal Growth Technology