New 12-Inch SiC Wafer Launched, Driving a Revolution in High-Performance Semiconductor Industry
February 20, 2025
New 12-Inch SiC Wafer Launched, Driving a Revolution in High-Performance Semiconductor Industry
Shanghai, February 20, 2025 — Shanghai Famous Trade Co., Ltd. is excited to announce the launch of its new 12-inch (300mm) Silicon Carbide (SiC) wafer, marking a significant breakthrough in the field of high-performance semiconductor materials. Designed for advanced semiconductor applications, this product meets the strict requirements of both research and production environments, and is widely used in industries such as electric vehicles (EVs), power electronics, and radio frequency (RF) technology.
Key Features of the High-Performance SiC Wafer
The new 12-inch SiC wafer features a 4H-N crystal orientation and a thickness of 750±25µm, offering exceptional electrical, thermal, and mechanical properties. Compared to traditional silicon materials, SiC’s high thermal conductivity, high breakdown voltage, and excellent electron mobility allow it to operate at higher voltages, temperatures, and frequencies, greatly improving device efficiency and reliability.
- Material Advantages: SiC has a wide bandgap, high thermal conductivity, and high voltage tolerance, making it ideal for high-power, high-temperature electronic devices, such as power MOSFETs and power diodes.
- Mechanical Properties: SiC’s hardness and stiffness far exceed traditional silicon materials, enhancing the durability and structural integrity of devices.
- Wide Applications: The new 12-inch SiC wafer is particularly suited for high-performance requirements in electric vehicles, power electronics, high-frequency communications, LED lighting, and more, driving progress in industries like new energy vehicles, renewable energy, and industrial power systems.
Product Specifications
- Diameter: 12 inches (300mm)
- Thickness: 750±25µm
- Crystal Orientation: 4H-N type, <0001> (on-axis) and 4° off-axis <1120>
- Resistivity: 0.015 – 0.03 Ω·cm
- Micropipe Density (MPD): ≤10/cm²
- Surface Roughness: Polish Ra ≤1nm, CMP Ra ≤0.2nm
- Packaging: Single wafer container
Breakthrough Application Prospects
The new 12-inch SiC wafer will be widely used in high-power electronic products, especially in electric vehicle power management systems, smart grids, energy storage, and power conversion systems. SiC’s high-temperature stability, strong power-handling capabilities, and fast-switching characteristics make it an ideal choice for next-generation, energy-efficient, low-power semiconductor devices.
Furthermore, these wafers will play a key role in high-frequency applications such as 5G communications, aerospace, and military radar systems. As the demand for high-performance electronic devices continues to rise, the 12-inch SiC wafer is poised to become a major driving force in the semiconductor industry.
About Shanghai Famous Trade Co., Ltd.
Shanghai Famous Trade Co., Ltd. specializes in the research, development, and supply of high-performance semiconductor materials. We are committed to providing cutting-edge technologies and high-quality products to global customers, driving technological advancements across industries. With years of technological expertise and market experience, we have become a recognized leader and trusted partner in the industry.
For more product information or order inquiries, please visit our official website or contact our sales team. We look forward to joining you in advancing the next generation of high-performance semiconductors.