SHANGHAI FAMOUS TRADE CO.,LTD

ZMSH Case Analysis: Leading Provider of High-Quality Synthetic Colored Sapphires     Overview ZMSH is a prominent supplier of high-quality, synthetic colored sapphires, offering a wide range of vibrant colors such as royal blue, bright red, yellow, pink, pink-orange, purple, and various shades of green, including emerald and olive green. Our synthetic sapphires are meticulously crafted to meet the most demanding industry standards, making us a trusted partner for businesses seeking reliable and aesthetically appealing gemstone solutions.     Key Offering: Synthetic Gemstones The core of ZMSH’s product line is our synthetic colored sapphires, which are not only visually stunning but also highly durable. Synthetic sapphires provide a perfect alternative to natural stones, offering consistency in quality, color, and availability. Unlike natural sapphires, which can vary in hue and clarity, ZMSH’s synthetic sapphires maintain a uniform appearance and meet customer specifications with precision.   Advantages of Synthetic Gemstones Consistent Quality: Our synthetic sapphires are produced under controlled conditions, ensuring uniformity in color, clarity, and size. This consistency eliminates the imperfections often found in natural stones. Color Customization: ZMSH offers an impressive selection of colors, including royal blue, bright red, yellow, and even rare hues like pink-orange and various shades of green (emerald and olive). We can also adjust the color intensity according to customer requirements, making our gemstones ideal for bespoke jewelry and industrial applications. Cost-Effective: Synthetic sapphires provide significant cost advantages without compromising on quality. Since they are lab-created, they are less expensive than their natural counterparts, making them accessible for a wider range of markets, from luxury goods to high-tech industries. Eco-Friendly and Ethical: Synthetic gemstones are a sustainable alternative to mined gemstones. By choosing ZMSH’s lab-created sapphires, businesses reduce the environmental impact associated with mining and avoid the ethical concerns tied to sourcing natural gemstones. Strength and Durability: Synthetic sapphires offer the same hardness and durability as natural sapphires, ranking 9 on the Mohs scale. This makes them an excellent choice for high-precision industrial applications, as well as for high-end jewelry that requires both beauty and resilience. Conclusion ZMSH is a leader in synthetic sapphire production, delivering high-quality, customizable, and cost-effective solutions for a variety of industries. With a strong focus on consistent quality and ethical production, we offer an unmatched range of synthetic colored sapphires that meet the aesthetic and functional needs of our clients. Whether it’s royal blue for luxury watches, emerald green for precision instruments, or any other vibrant hue, ZMSH ensures excellence in every gemstone we produce.

Background ZMSH has long been a leader in silicon carbide (SiC) wafer and substrate technology, providing 6H-SiC and 4H-SiC crystal substrates for the production of high-frequency, high-power, high-temperature, and radiation-resistant electronic devices. As market demand for higher-performance electronic devices continues to grow, ZMSH has invested in research and development, resulting in the launch of a new generation of 4H/6H-P 3C-N SiC crystal substrates. This product integrates traditional 4H/6H polytype SiC substrates with new 3C-N SiC films, offering significant performance enhancements for next-generation high-power and high-frequency electronic devices. Analysis of Existing Products: 6H-SiC and 4H-SiC Crystal Substrates Product Features Crystal Structure: Both 6H-SiC and 4H-SiC have hexagonal crystal structures. The 6H type has slightly lower electron mobility and a narrower bandgap, while the 4H type provides higher electron mobility and a wider bandgap (3.2 eV), making it ideal for high-frequency and high-power devices. Conductivity Type: Supports N-type or semi-insulating, catering to various device design requirements. Thermal Conductivity: SiC substrates offer thermal conductivity between 3.2–4.9 W/cm·K, ensuring effective heat dissipation, which is critical for high-temperature electronics. Mechanical Properties: With high hardness (Mohs hardness of 9.2), SiC substrates offer mechanical stability, making them suitable for wear-resistant and mechanically demanding applications. Applications: These substrates are primarily used in power electronic devices, high-frequency devices, and some high-temperature and radiation-resistant applications. Technical Limitations Although 6H-SiC and 4H-SiC have performed well in the market, their performance still falls short in certain high-frequency, high-power, and high-temperature applications. Challenges such as high defect rates, limited electron mobility, and bandgap constraints mean that the performance of these materials has not yet fully met the needs of next-generation electronic devices. Therefore, the market demands higher-performance, lower-defect materials to enhance device efficiency and stability. Innovation in the New Product: 4H/6H-P 3C-N SiC Crystal Substrates To address the limitations of traditional 6H and 4H-SiC materials, ZMSH has introduced the innovative 4H/6H-P 3C-N SiC crystal substrate. By epitaxially growing 3C-N SiC films on 4H/6H-SiC substrates, the new product significantly improves material performance.     Technological Advancements Polytype Integration Technology: Using chemical vapor deposition (CVD) technology, 3C-SiC films are precisely epitaxially grown on 4H/6H-SiC substrates, reducing lattice mismatch and defect density, thus improving the structural integrity of the material. Improved Electron Mobility: Compared to traditional 4H/6H-SiC, the 3C-SiC crystal offers higher electron mobility, making the new material more suitable for high-frequency applications. Higher Breakdown Voltage: Electrical performance tests show significant improvement in breakdown voltage, making the product more suitable for high-power applications. Low Defect Rate: Optimized growth conditions have significantly reduced crystal defects and dislocations, enabling the material to maintain long-term stability in high-pressure and high-temperature environments. Optoelectronic Integration: 3C-SiC has unique optoelectronic properties, particularly suitable for ultraviolet detectors and other optoelectronic applications, expanding the product's application range. Key Advantages of the New Product Higher Electron Mobility and Breakdown Voltage: Compared to 6H and 4H-SiC, the 3C-N SiC film allows electronic devices to perform more stably under high-frequency and high-power conditions, with improved transmission efficiency and longer device lifespan. Enhanced Thermal Conductivity and Stability: The new SiC material exhibits improved thermal conductivity and stability at high temperatures, making it ideal for applications above 1000°C. Integrated Optoelectronic Properties: The optoelectronic characteristics of 3C-SiC further enhance the competitiveness of SiC substrates in the optoelectronic device market, especially in ultraviolet detection and optical sensor applications. Chemical Stability and Corrosion Resistance: The new SiC material has increased stability in chemical corrosion and oxidation environments, making it suitable for more demanding industrial settings. Application Scenarios The new 4H/6H-P 3C-N SiC crystal substrate, with its superior electronic and optoelectronic properties, is ideal for the following key areas: Power Electronics: Its high breakdown voltage and excellent thermal conductivity make it an ideal choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes. High-Frequency RF and Microwave Devices: The high electron mobility makes it perform exceptionally well in high-frequency RF and microwave devices. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make the new product particularly suitable for developing ultraviolet detectors and optoelectronic sensors. Case Conclusion and New Product Recommendation ZMSH has successfully launched the new generation of 4H/6H-P 3C-N SiC crystal substrates through technological innovation, significantly enhancing SiC materials' competitiveness in the high-power, high-frequency, and optoelectronic application markets. By epitaxially growing 3C-N SiC films, the new product reduces lattice mismatch and defect rates, improves electron mobility and breakdown voltage, and ensures long-term stable operation in harsh environments. This product is not only suitable for traditional power electronics but also expands application scenarios in optoelectronics and ultraviolet detection. ZMSH recommends its customers adopt the new 4H/6H-P 3C-N SiC crystal substrate to meet future high-power, high-frequency, and optoelectronic devices' increasing performance requirements. By embracing this technological innovation, customers can enhance product performance and stand out in an increasingly competitive market. Product Recommendation   4H/6H P-Type Sic Wafer 4inch 6inch Z Grade P Grade D Grade Off Axis 2.0°-4.0° Toward P-type Doping   4H and 6H P-type silicon carbide (SiC) wafers are critical materials in advanced semiconductor devices, especially for high-power and high-frequency applications. SiC’s wide bandgap, high thermal conductivity, and excellent breakdown field strength make it ideal for operations in harsh environments where traditional silicon-based devices may fail. P-type doping in SiC, achieved through elements like aluminum or boron, introduces positive charge carriers (holes), enabling the fabrication of power devices such as diodes, transistors, and thyristors.